A UNIFORMITY INVESTIGATION OF UNDOPED, SEMIINSULATING GAAS GROWN BY THE VERTICAL BRIDGMAN TECHNIQUE

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Atıf İçin Kopyala

BREIVIK L., BROZEL M., STIRLAND D., TÜZEMEN S.

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.7, 1992 (SCI-Expanded)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 7
• Basım Tarihi: 1992
• Doi Numarası: 10.1088/0268-1242/7/1a/051
• Dergi Adı: SEMICONDUCTOR SCIENCE AND TECHNOLOGY
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Atatürk Üniversitesi Adresli: Evet

Özet

We have carried out a uniformity investigation of undoped, semi-insulating GaAs grown by the vertical Bridgman method.