Light Sensitive Properties and Temperature-Dependent Electrical Performance of n-TiO2/p-Si Anisotype Heterojunction Electrochemically Formed TiO2 on p-Si

Koca M., Yilmaz M., Ekinci D., Aydogan S.

JOURNAL OF ELECTRONIC MATERIALS, cilt.50, sa.9, ss.5184-5195, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 50 Sayı: 9
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1007/s11664-021-09040-1
  • Dergi Adı: JOURNAL OF ELECTRONIC MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, PASCAL, Applied Science & Technology Source, Chemical Abstracts Core, Chimica, Compendex, Computer & Applied Sciences, INSPEC
  • Sayfa Sayıları: ss.5184-5195
  • Anahtar Kelimeler: n-TiO2/p-Si, anisotype heterojunction, light sensitivity, inhomogeneous barrier height, CAPACITANCE-VOLTAGE CHARACTERISTICS, POLYANILINE/P-SI/AL STRUCTURE, BARRIER HEIGHT INHOMOGENEITY, SCHOTTKY DIODES, I-V, FILMS, PHOTOCATALYSIS, MECHANISMS, PARAMETERS, DEPOSITION
  • Atatürk Üniversitesi Adresli: Evet

Özet

We report the fabrication, electrical characteristics and light sensitivity of n-TiO2/p-Si heterojunction devices in which the TiO2 layer was grown on p-Si substrates by cathodic electrodeposition. After the structural, morphological, and optical characterization of the deposited metal oxide film, 15 devices were fabricated. One was analyzed by current-voltage (I-V) and capacitance-voltage (C-V) analyses in a wide temperature range. Furthermore, another device was exposed to light and the I-V measurements were analyzed to investigate the light response of the n-TiO2/p-Si heterojunction. The device exhibited a photodiode property such that the reverse bias current value of the heterojunction significantly increased with exposure to the light. Temperature-dependent I-V and C-V measurements of the device showed that the device characteristics depend on both temperature and voltage. Thermionic emission and Norde method were used to evaluate temperature-related I-V measurements. According to the experimental results, it was observed that the barrier height increased [ranging from 0.24 eV (80 K) to 0.76 eV (300 K)] with increasing temperature and the ideality factor decreased [ranging from 4.94 (80 K) to 3.17 ( 300 K)]. This behaviour was attributed to the inhomogeneous barrier height of the n-TiO2/p-Si.