Akademik Veri Yönetim Sistemi
Physica E: Low-Dimensional Systems and Nanostructures, cilt.21, sa.1, ss.85-90, 2004 (SCI-Expanded)
Resistivity and Hall-effect measurements have been performed on Ho-doped InSe single crystal grown by the Bridman-Stockberger method. The mass ratios of Ho added to the starting melts were 25 x 10(-4), 25 x 10(-3) : Ho added in order to obtain different Ho concentrations. We found the temperature dependence of the Hall mobility as mu(e), similar to T-1.26 for n-type InSe, mu(e) similar to T (-0.24) for InSe : Ho-0.0025 and mu(e) similar to T-1.03 for InSe : Ho-0.025 samples at 140-320 K. Impurity-energy levels calculated from In(n/T (3/2)) vs 10(3)/T plots for InSe at 30-90 and 100-320 K are E-v - 8.2 meV, and E-c - 36.8 meV, for InSe : Ho-0.0025 at 20-50 and 90-320 K are E-v + 8.3 meV, and E-c - 32.2 meV, for InSe : Ho-0.025 at 30-90 and 80-290 K are E-v - 8.53 meV, and E-c - 35 meV, respectively. The low Ho doping cleans the impurities acting as acceptors between the layers and makes the compensating impurity levels inactive. But the high Ho doping behaves as an impurity in InSe. (C) 2003 Elsevier B.V. All rights reserved.