ANNEALING PROCESS EFFECT ON TUNGSTEN DOPED ZnO THIN FILMS

2ND INTERNATIONAL AZERBAIJAN CONGRESS ON LIFE, SOCIAL, HEALTH, AND ART SCIENCES, Baku, Azerbaycan, 13 - 14 Ağustos 2022, cilt.1, ss.153-158

Tungsten transition metal doped ZnO (ZnO:W) nanostructure was grown by Radio Frequency (RF)

Sputtering technique under 14mtorr grown pressure on glass substrate at 450 o C grown temperature.

The change in the structural and optical properties of the crystal structure with the annealing process

was investigated in detail. ZnO:W were analyzed through Scanning Electron Microscopy (SEM), X-ray

Diffraction (XRD) by operating Cu-Kα lines (λ = 1.5406 Å), for structural analysis. Absorption method

(UV–VIS) has been operated for examination of optical properties. ZnO: W thin films have hexagonal

crystal structure and P63mc space group (a (Å) = b (Å):3,24, c (Å):5,17). XRD measurement of the

ZnO:W thin films peak has been observed at angle of 34.43°, 34.75° also FWHM size of 0,98 ; 0,49 for

the ZnO:W and annealed at 550 oC ZnO:W , respectively. Absorption measurement of the ZnO:W thin

films band gab has been observed at of 3,15eV ;3.25eV for the ZnO:W and annealed at 550 oC ZnO:W ,

respectively. Structural and morphological changes in thin film depending on the annealing process has

been observed with the SEM measurements. Results from SEM images are compatible with XRD and

absorption measurements.

Keywords: ZnO, Tungsten, Magnetron Sputtering,