Dependence of electrical parameters of co/gold-chloride/p-Si diode on frequency and illumination

Erdogan E., Yılmaz M., Aydoğan Ş., İncekara Ü., Şahin Y.

OPTICAL MATERIALS, cilt.121, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 121
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.optmat.2021.111613
  • Dergi Adı: OPTICAL MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Computer & Applied Sciences, INSPEC
  • Anahtar Kelimeler: Photodiode, Gold-chloride, Electrical characteristics, Schottky diode, Current-voltage analysis, Capacitance-voltage, V CHARACTERISTICS, FABRICATION, PHOTODIODE, PHOTODETECTOR
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this study, metal-semiconductor contact with an organic interlayer was fabricated. Ideality factor (n), barrier height (phi(b)), and series resistance (R-s) values for Co/Gold-chloride/p-Si structure were calculated for dark and 100-400 mW/cm(2) light illumination intensities. The current-voltage (I-V) measurements were used to extract the electrical parameters of Co/Gold-chloride/p-Si device such as ideality factor, barrier height and series resistance using different methods like thermionic emission theory and Norde method. The n values were found in the range of 2.00-2.52 and the phi(b) were calculated in the range of 0.50-0.53 eV and under light power intensities. Additionally, frequency-dependent capacitance-voltage (C-V) measurements were done at room temperature and frequency range from 100 kHz to 1 MHz. The results show that at sufficiently high frequencies, the interface cannot flow A.C signals. Furthermore, barrier height was also calculated from the C-2-V plot for given the frequency range for Co/Gold-chloride/p-Si device. With this study, it has been shown that the rectifier contact of the organic-inorganic structure formed with suitable organic and inorganic semiconductor can be formed and this structure can be used in optoelectronic applications.