The effect of electron irradiation on the electrical characteristics of the Aniline Blue/n-Si/Al device

Aydoğan Ş., Şerifoğlu K., Turut A.

SOLID STATE SCIENCES, cilt.13, ss.1369-1374, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 13
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.solidstatesciences.2011.03.023
  • Dergi Adı: SOLID STATE SCIENCES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1369-1374
  • Anahtar Kelimeler: Electron irradiation, Aniline Blue, Schottky barrier, Ideality factor, Series resistance, CURRENT-VOLTAGE CHARACTERISTICS, GAN SCHOTTKY DIODES, TEMPERATURE, DEPENDENCE, GAAS
  • Atatürk Üniversitesi Adresli: Evet

Özet

The effect of 12 MeV energy (3 x 10(12) e(-)/cm(2) fluency) electron irradiation on Au/Aniline Blue(AB)/n-Si/Al rectifying device has been studied in terms of the current-voltage (I-V), capacitance voltage (C-V), and capacitance-frequency (C-f) measurements at room temperature. It has been observed that the electron irradiation causes an increase in the ideality factor and barrier height. The detected changes in I-V characteristics have been explained by the formation of radiation-induced point defects. A decrease in the capacitance has been observed after electron irradiation. This has been attributed to a decrease in the net ionized dopant concentration that occurred as a result of electron irradiation. (C) 2011 Elsevier Masson SAS. All rights reserved.