Characterization of electrical transport and properties of an Al/porous Si (PS)/p-Si/Al heterojunction

GÜLNAHAR M., KARACALI T., EFEOĞLU H.

Journal of Alloys and Compounds, cilt.797, ss.859-864, 2019 (SCI-Expanded, Scopus)

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 797
  • Basım Tarihi: 2019
  • Doi Numarası: 10.1016/j.jallcom.2019.04.182
  • Dergi Adı: Journal of Alloys and Compounds
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.859-864
  • Anahtar Kelimeler: Porous Si, Si, Schottky structures, INP SCHOTTKY DIODE, POROUS-SILICON, TEMPERATURE-DEPENDENCE, CURRENT-VOLTAGE, PHOTOLUMINESCENCE, FABRICATION, MECHANISMS, BEHAVIOR, JUNCTION
  • Atatürk Üniversitesi Adresli: Evet