Akademik Veri Yönetim Sistemi
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, cilt.125, sa.6, 2019 (SCI-Expanded)
To investigate their formation mechanism and basic electronic behaviors, in this study undoped and tungsten (W)-doped vanadium oxide films were comparatively analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, photoluminescence (PL) and UV-Vis spectroscopy. The XRD measurement showed that the W doping causes a change in crystalline phase, improvement of grain size, a decrease in dislocation and stress with different dopant ratios. The SEM and AFM images evidenced that the W-doped films change nanostructured form from nanorods to composition of nanorods and nanoplates at 400 degrees C, which is 20% lower than general formation temperature of vanadium pentoxide (V2O5) nanorods, while the undoped film have small-sized nanostructural morphology as an initial stage. The Raman spectrum also indicates significant changes of its structural and optical properties. The PL quenching is observed in the PL spectra of the W-doped V2O5 films with decreasing deep-level emission. Band gap, Urbach energy, reflective index and dielectric constant of all the films were calculated by data of the UV-Vis and reflectance measurements. The results showed that the W-doped V2O5 films were more suitable for (opto)electronic device applications such as solar cell, gas sensor, electrochromic electrode and battery.