Highly sensitive, self-powered photodetector based on reduced graphene oxide- polyvinyl pyrrolidone fibers (Fs)/p-Si heterojunction


Khalili S., Chenari H. M., Yıldırım F., Orhan Z., Aydoğan Ş.

JOURNAL OF ALLOYS AND COMPOUNDS, vol.889, 2021 (SCI-Expanded) identifier identifier

  • Publication Type: Article / Article
  • Volume: 889
  • Publication Date: 2021
  • Doi Number: 10.1016/j.jallcom.2021.161647
  • Journal Name: JOURNAL OF ALLOYS AND COMPOUNDS
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Public Affairs Index, Civil Engineering Abstracts
  • Keywords: RGO-PVP fibers, Self powered-photodetector, ON/OFF ratio, Detectivity, BARRIER HEIGHT, THIN-FILMS, VOLTAGE CHARACTERISTICS, CAPACITANCE-VOLTAGE, IDEALITY FACTORS, GRAPHITE OXIDE, SCHOTTKY, SI, REDUCTION, PERFORMANCE
  • Ataturk University Affiliated: Yes

Abstract

A reduced graphene oxide-the polyvinyl pyrrolidone (RGO-PVP) fibers (Fs)/p-Si photodetector having photoconductive mode was fabricated by electrospinning of the fibers on p-Si. The Field Emission Scanning Electron Microscope (FESEM) image of RGO sheets, the X-ray Diffraction (XRD) analyses, the Fourier transform infrared (FTIR) spectra, and the Thermogravimetric analysis (TGA) curves of graphene oxide (GO) and RGO were carried out. In addition to the current-voltage (I-V) and frequency-dependent capacitance voltage (C-V) measurements of the device in the dark, the I-V measurements for various light intensities were performed and investigated in detail. The device showed a good rectification ratio of 1121 (at +/- 1 V) for dark as well as self-powering characteristics and the ON/OFF ratio of increases from 3.9 x 10(5) (10 mW/cm(2)) to 1.5 x 106 (30 mW/cm(2)) at self-powered mode under light illumination. It was observed that the reverse bias current of the device increased approximately 3 orders under 10 mW/cm(2) light intensity with respect to the dark one and the RGO-PVP Fs/p-Si device could be a potential device for optoelectronic applications. It was found from the responsivity, ON/OFF ratio, and the detectivity that the device is highly sensitive to light and could be an important design for optical applications such as photodetectors. (C) 2021 Elsevier B.V. All rights reserved.