Mass attenuation coefficients, effective atomic numbers and electron densities of undoped and differently doped GaAs and InP crystals

DEMİR L., HAN İ.

ANNALS OF NUCLEAR ENERGY, cilt.36, sa.7, ss.869-873, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 36 Sayı: 7
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.anucene.2009.03.015
  • Dergi Adı: ANNALS OF NUCLEAR ENERGY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.869-873
  • Atatürk Üniversitesi Adresli: Evet

Özet

The total mass attenuation coefficients (mu/rho), for GaAs, GaAs (semi-insulating; S-I) GaAs:Si (N+), GaAs:Zn, InP:Fe, InP:Fe-As, InP:S and InP:Zn crystals were measured at 22.1, 25.0, 59.5 and 88.0 keV photon energies. The samples were irradiated with Cd-109 and Am-241 radioactive point sources using transmission arrangement. The X- and gamma-rays were counted by a Si (Li) detector with resolution of 160 eV at 5.9 keV. Total atomic and electronic cross-sections (a, and a,), effective atomic numbers (Z(eff)) and electron densities (N-el) were determined using the obtained mu/rho values for the investigated crystals. (C) 2009 Elsevier Ltd. All rights reserved.