Investigation of the switching phenomena in Ga2Te3 single crystals
JOURNAL OF CRYSTAL GROWTH, cilt.279, ss.110-113, 2005 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 279
- Basım Tarihi: 2005
- Doi Numarası: 10.1016/j.jcrysgro.2005.01.106
- Dergi Adı: JOURNAL OF CRYSTAL GROWTH
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.110-113
- Anahtar Kelimeler: crystal structure, Bridgman-Stockbarger crystal growth method, single crystal growth, Ga2Te3 single crystal, semiconducting III-V compounds
- Atatürk Üniversitesi Adresli: Evet
Özet
Unintentionally doped p-type Ga2Te3 semiconductor single crystals have been grown by a directional freezing method based on the Bridgman-Stockbarger crystal growth method. The switching effect of the compound has been investigated at various temperatures (140-300 K). The current-voltage (I- V) characteristics of the compound show two different regions: an ohmic region at low-current densities and a negative differential resistance (NDR) region at moderate and higher current densities. This behavior has been explained by an electrothermal model. (c) 2005 Elsevier B.V. All rights reserved.