Effect of in-/ex-situ annealing temperature on the optical, structural and gas sensing dynamics of CdS nanostructured thin films

Gormez A. E., Basyooni M. A., Zaki S. E., EKER Y. R., SÖNMEZ E., YILMAZ M.

SUPERLATTICES AND MICROSTRUCTURES, cilt.142, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 142
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.spmi.2020.106536
  • Dergi Adı: SUPERLATTICES AND MICROSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: CdS, In-situ and ex-situ annealing, Nanostructured thin film, Gas sensor, ROOM-TEMPERATURE, SOLAR-CELL, RF, GROWTH, MORPHOLOGY
  • Atatürk Üniversitesi Adresli: Evet

Özet

Effect of in-/ex-situ annealing on the structure, optical, photoluminescence, electrical characterization and gas sensing dynamics on CdS thin films are presented. Raman characterizations showed an increase in the peak intensity with increasing the annealing temperature under ex-situ, while a lower peak intensity observed through the in-situ annealing condition. No shift was observed in the Photoluminescence peaks through the yellow band peaks of in-situ annealed samples, however, a slightly blue shift was observed through the ex-situ annealed samples. High conductivity was observed for all samples, while in the case of in-situ RT, in-situ 100 degrees C, ex-situ 200 degrees C and ex-situ 300 degrees C, a CO2 and O-2 gas sensing activity have been tested. The ex-situ 300 degrees C sample shows a higher response towards CO2 compared with the ex-situ 200 degrees C film. While, both in-situ RT and 100 degrees C sensors show the same response towards CO2 with a high gas response. However, the in-situ 100 degrees C sensor has the highest response compared to in-situ RT film with a high response of 25% at 50 sccm towards O-2.