Some Considerable Effects on Pt/n-InP Schottky Diode Current-Voltage Characteristics due to Electron Irradiation

Korkut H., Ejderha K., Akbay A., Ozturk Y., Korkut T., Turut A.

1st International Congress on Advances in Applied Physics and Materials Science (APMAS), Antalya, Türkiye, 12 - 15 Mayıs 2011, cilt.1400, ss.497-501, (Tam Metin Bildiri) identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 1400
  • Doi Numarası: 10.1063/1.3663170
  • Basıldığı Şehir: Antalya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.497-501
  • Atatürk Üniversitesi Adresli: Evet

Özet

Schottky contacts have impact role in a large perspective of electronic devices from sensing to switching and detecting. Radiation applications of Schottky contacts are popular fields at the present day. We fabricated a Pt/n-InP Schottky diode by using magnetron sputtering technique. Current-voltage characteristics were measured before and after 12 MeV electron irradiation at 260 and 320K. Then electrical characteristics were analyzed.