A study of Eu incorporated ZnO thin films: An application of Al/ZnO:Eu/p-Si heterojunction diode

Turgut G., Duman S., SÖNMEZ E., Ozcelik F. S.

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, cilt.206, ss.9-16, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 206
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.mseb.2016.01.006
  • Dergi Adı: MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.9-16
  • Anahtar Kelimeler: Zinc Oxide, Eu doping, Heterojunction diode, Sol-gel spin coating, OPTICAL-PROPERTIES, PHOTOLUMINESCENCE PROPERTIES, PHOTOCATALYTIC ACTIVITY, LUMINESCENCE PROPERTIES, PHYSICAL-PROPERTIES, FLUORINE, TRANSPARENT, MORPHOLOGY, GROWTH, SHELL
  • Atatürk Üniversitesi Adresli: Evet

Özet

In present work, the pure and europium (Eu) incorporated zinc oxide (ZnO) thin films were deposited with sol-gel spin coating by using zinc acetate dehydrate and Eu (III) chloride salts. The coated films were examined by means of XRD, AFM and UV/VIS spectrophotometer. The ZnO hexagonal wurtzite nanoparticles with (002) preferential direction were observed for all films. The values of crystallite size, micro-strain and surface roughness continuously increased from 21 nm, 1.10 x 10(-3) and 2.43 nm to the values of 35.56 nm, 1.98 x 10(-3) and 28.99 nm with Eu doping, respectively. The optical band gap value of the pure ZnO initially increased from 3.296 eV to 3328 eV with Eu doping up to 2 at.% doping level, then it started to decrease with more Eu content. The electrical features of Al/n-ZnO:Eu/p-Si heterojunction diodes were inquired by current-voltage (I-V) measurements at the room temperature. 2016 Elsevier B.V. All rights reserved.