Akademik Veri Yönetim Sistemi
METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE, sa.6, ss.2726-2735, 2015 (SCI-Expanded)
Un-doped and Mn-doped ZnO nanocrystalline thin films and n-ZnO/n-Si heterojunction have been prepared by chemical spray pyrolysis technique. The microstructure, morphology, optical, and electrical properties have been studied. The X-ray analyses have revealed that all films are in single phase and have wurtzite structure. Besides, it has been indicated that there are not any secondary phases. The optical properties have been evaluated by UV-Vis measurement. It has shown that band gap decreases with Mn incorporation from 3.29 to 3.19 eV. Schottky diode applications of the films have been performed by evaporation of Au on pure and Mn-doped ZnO films. Current-voltage (I-V) and capacitance-voltage (C-V) measurements of the n-ZnO/n-Si heterojunction indicate good diode characteristic and the barrier heights have been calculated as 0.89 and 0.79 eV for un-doped and Mn 1 pct-doped ZnO films. Besides, schematic cross section of the Au/n-ZnO/n-Si/Al device and energy band diagram of n-ZnO/n-Si heterojunction has been illustrated to clarify the transport mechanism. All results suggest that the characteristic properties of the ZnO thin films can be adjustable with the Mn doping and Al/n-Si/n-ZnO/Au diode can be used for UV detection application in photonic devices.