Research Information System
7th international conference on advances in natural and applied sciences (ICANAS 2024), Antalya, Turkey, 17 - 21 April 2024, pp.53, (Summary Text)
In this study, a photodiode was fabricated using the WS2 interfacial layer coated between Au metal and p-Si semiconductor, and its electrical behavior against light was characterized in detail. The current-voltage and transient photocurrent measurements under different light intensities were used to determine the relevant characteristics. As a result of the study, it was found that while the ideality factor value was 1.49 in the dark, it increased to 2.26 when the light intensity to which the device was exposed was 100 mW/cm2. However, the barrier height value also decreased from 0.81 eV to 0.68 eV. Additionally, it was determined that the highest rectification was in the measurement performed in a dark environment. The fabricated device showed rectifying behavior and hence the obtained experimental values showed that the fabricated device complies with thermionic emission theory and therefore the electrical parameters were evaluated using thermionic emission theory [1-3]. As a result of the analyses, it has been confirmed that the produced device and WS2 material can be used in optoelectronic technology, especially in photodiode and photodetector applications. Keywords: Photodiode, WS2, Electrical properties, Thermionic emission theory