Resistive switching of reactive sputtered TiO2 based memristor in crossbar geometry

EFEOĞLU H., Gullulu S., Karacali T.

APPLIED SURFACE SCIENCE, cilt.350, ss.10-13, 2015 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 350
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.apsusc.2015.03.088
  • Dergi Adı: APPLIED SURFACE SCIENCE
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.10-13
  • Anahtar Kelimeler: Memristor, Metal oxide, TiO2, Resistive ram, RRAM
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, TiO2 based metal/metal oxide/metal memristor structures are investigated using I-V-t measurements. TiO2 films are deposited to pre-patterned area using a lift-off technique. Bottom and top metallization are done using Pt and Ti RF-sputtering, and 10 nm thick active TiO2 layer is grown by reactive RF sputter at room temperature. Amorphous film formation is observed by XRD measurements. Initial high resistance state-of-films lead us to fabricate memristors in matrix form using photolithography. We note that although measurements carried out at room temperatures demonstrated a well-pinched behavior, during the continuous loop the resistance of structure under the test steadily increased after each scanning polarity change. A step-like resistance change is observed by application of periodic DC pulses. This change was step like for the first 20 s. time duration but turned to a random manner for the prolonged time. (C) 2015 Elsevier B.V. All rights reserved.