A comprehensive study on SILAR grown cobalt doped CdO thin films

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İSKENDEROĞLU D., GÜNEY H., Gulduren M. E., Albayrak M.

OPTIK, cilt.254, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 254
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1016/j.ijleo.2022.168658
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC
  • Anahtar Kelimeler: XRD, Thin films, Co doped CdO, SILAR, PL emission intensity and bandgap engineering, OPTICAL-PROPERTIES, ELECTRICAL-PROPERTIES, PHYSICAL-PROPERTIES, PHOTOLUMINESCENCE
  • Atatürk Üniversitesi Adresli: Evet

Özet

Herein, pure and cobalt (Co) doped cadmium oxide (CdO) thin films successfully deposited onto glass slides by successive ionic layer adsorption and reaction (SILAR) method. And, the structural, morphological, optical, and electrical properties were studied by employing X-ray diffraction (XRD), field emission scanning electron microscope (FE-SEM), Energy dispersive X-ray analysis (EDAX), Ultraviolet-visible spectroscopy (Uv-vis), Photoluminescence (PL) spectrum, I-V measurements for the produced samples. The XRD analysis uncovered that the CdO films exhibited cubic phase of cadmium oxide with the preferred orientation (111) plane. And, it showed that Co atoms successfully incorporated into the CdO lattices as no secondary phases were detected in the XRD spectra. The FE-SEM images displayed that the introduced impurities modified the surface morphologies. The EDAX analysis definitely proved the presence of the aimed materials (Cd, O, and Co) on the SILAR grown samples. The Uv-vis spectroscopy showed that optical energy bandgap enhanced from 2.5 eV to 2.93 eV as CdO nanostructures (NSs) doped with the different Co doping concentrations. The PL spectrum revealed that the luminescence characteristics of produced films were evidently influenced by the Co doping in the CdO NSs. Also, the resistivity of the produced samples was found to be decreased by the help of the I-V measurements.