Electrochemically induced atom-by-atom growth of ZnS thin films:: A new approach for ZnS co-deposition


Oznueluer T., Erdogan I., Demir U.

LANGMUIR, cilt.22, sa.9, ss.4415-4419, 2006 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 22 Sayı: 9
  • Basım Tarihi: 2006
  • Doi Numarası: 10.1021/la052404g
  • Dergi Adı: LANGMUIR
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.4415-4419
  • Atatürk Üniversitesi Adresli: Evet

Özet

Ultrathin films of ZnS were grown on Au (111) substrates using a novel, simple co-deposition method and characterized using X-ray diffraction (XRD), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and UV-visible spectroscopy. Cyclic voltammograms were used to determine approximate deposition potentials for co-deposition. XRD shows that the material growth is highly preferential with (111) orientation. Both AFM and XRD data indicate that the ZnS growth mechanism starts by the formation of rounded nanoparticles at the surface and then continues by lateral and vertical growth to form flat square crystallites of ZnS. UV-vis spectra taken for the ZnS thin films with various thicknesses, which is related to deposition time, shows that the band gap of the ZnS decreases as the film thickness increases.