Investigation the Performance of Cr-Doped ZnO Nanocrystalline Thin Film in Photodiode Applications

Tursucu A., Aydogan S., Kocyigit A., Ozmen A., Yilmaz M.

JOM, cilt.74, sa.3, ss.777-786, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 74 Sayı: 3
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1007/s11837-021-05096-w
  • Dergi Adı: JOM
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, ABI/INFORM, Aerospace Database, Applied Science & Technology Source, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.777-786
  • Atatürk Üniversitesi Adresli: Evet

Özet

Undoped and Cr-doped zinc oxide (ZnO) thin films were deposited on the glass and p-Si substrates by the chemical spray pyrolysis technique. The films were characterized by x-ray diffractometry (XRD) and UV-visible spectrometry, and electrical characterization was achieved by using the films as an interfacial layer between the Au and p-Si. The XRD results confirmed the undoped and Cr-doped ZnO thin film crystalline structures. UV-visible spectra provided the transmittance plots and band gap energy values. I-V measurements were performed on the fabricated Au/ZnO/p-Si and Au/ZnO:Cr/p-Si devices to determine the effect of the ZnO interfacial layer on their performance. Various junction parameters, such as the ideality factor, barrier height, and series resistance, were calculated from the I-V measurements by various techniques, and have been discussed in detail. A 100-mW/cm(2) power intensity light was exposed on the Au/ZnO:Cr/p-Si device to see the photodiode behavior as well as to determine light sensitivity parameters such as photosensitivity and detectivity. The results highlight that the Au/ZnO:Cr/p-Si device can be thought of for optoelectronic applications.