Effective mass calculation for InSe, InSe : Hoo(0.0025), InSe : Ho-0.025, InSe : Ho-0.005 and InSe : Ho0.05 samples using the external electric field shifting

Ates A.

INDIAN JOURNAL OF PURE & APPLIED PHYSICS, cilt.42, sa.3, ss.205-210, 2004 (SCI-Expanded) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 42 Sayı: 3
  • Basım Tarihi: 2004
  • Dergi Adı: INDIAN JOURNAL OF PURE & APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.205-210
  • Atatürk Üniversitesi Adresli: Evet

Özet

Undoped InSe and Ho doped InSe single crystals were grown by Bridgman-Stockberger method. The InSe crystals both undoped and doped with different ratios of (InSe:Ho-0.0025, InSe:Ho-0.0125 and InSe:Ho-0.005 and InSe:Hoo.05) had, no cracks or voids on the surface. No polishing or cleaning treatments were carried out on the cleaved faces of these samples because of the natural mirror-like cleavage faces. The absorption measurements were carried out in the temperature range 10-320 K and the external electric field effect on the absorption measurements was investigated. The absorption edge shifted towards the longer wavelengths under an electric field as 6 kV/cm. Using the electric field shits, effective mass values are calculated for all the samples.