ZnS thin film and Zn/ZnS/n-Si/Au-Sb sandwich structure grown with SILAR method and defining the characteristic parameters

Ates A., GÜZELDİR B., SAĞLAM M.

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, cilt.14, sa.1, ss.28-36, 2011 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 14 Sayı: 1
  • Basım Tarihi: 2011
  • Doi Numarası: 10.1016/j.mssp.2010.12.014
  • Dergi Adı: MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.28-36
  • Anahtar Kelimeler: SILAR, ZnS thin film, Zn/ZnS/n-Si/Au-Sb sandwich structure, Characterization, SCHOTTKY-BARRIER HEIGHT, ELECTRICAL CHARACTERISTICS, TRANSPORT, CONTACTS, DIODES
  • Atatürk Üniversitesi Adresli: Evet

Özet

ZnS thin film has been grown on n-Si substrate for obtaining Zn/ZnS/n-Si/Au-Sb sandwich structure by using the Successive Ionic Layer Adsorption and Reaction (SILAR) method. For structural properties, the XRD and SEM measurements have been done and it is seen that films exhibit polycrystalline behavior. The energy band gap value of ZnS thin film grown glass substrate has been found as 3.77 eV from the absorption measurements. The sandwich structure has demonstrated clearly rectifying behavior by the current-voltage (I-V) curves at room temperature Thermal annealing effect on the structural, optical and electrical properties has been investigated. From I-V characteristics n, Phi(b) and mean R-s values have been calculated as 2.60, 0.71 eV and 3.8 k Omega at room temperature respectively. For annealed films at 400 degrees C, these values have been found as 1.68, 0.62 eV and 1.5 k Omega, respectively. From C-V characteristics, carrier concentration, Fermi energy and barrier height values of this structure were calculated as a function of annealing temperature. (C) 2010 Elsevier Ltd. All rights reserved.