Akademik Veri Yönetim Sistemi
Journal of Anatolian Physics and Astronomy, cilt.3, sa.1, ss.36-43, 2024 (Hakemli Dergi)
The importance of semiconductors paving the way for nano and optoelectronic
technology has recently been increasing. But, producing them easily and having their
vast application fields are most important. For that reason, the crystals have a wide
application field and their characteristics which are determined are needed. Some
researchers (Irie et al., 1979; Shih et al., 1986) have suggested that the crystals grown
should be grown in a single ampoule and a single stage, considering the idea that it
would cause selenium loss. Considering this situation, it was decided to grow XIn2Se4
crystal with this method. XIn2Se4 (X=Cu, Mn, Al, Fe) single crystals used in this
research were grown using the Bridgman/Stockbarger method. All of the samples
were freshly and gently cleaved with a razor blade from the grown ingots and no
further polishing and cleaning treatments were required because of the natural
mirror-like cleavage faces. The Samples were cleaved along the cleavage planes
(001). In this study, single crystal growth was done in a single step. The structure of
XIn2Se4 semiconductors was analysed theoretically using x-ray diffractometer (XRD),
scanning electron microscopy (SEM), energy dispersive x-ray (EDX) and Raman
spectroscopy techniques.