Ultraviolet and visible photo-response of transparent conductive Al-doped ZnO (AZO)/n-Silicon isotype heterojunction device

Ceviz Şakar B., Orhan Z., Yıldırım F., Aydoğan Ş.

JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.55, sa.42, 2022 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 55 Sayı: 42
  • Basım Tarihi: 2022
  • Doi Numarası: 10.1088/1361-6463/ac8081
  • Dergi Adı: JOURNAL OF PHYSICS D-APPLIED PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Communication Abstracts, Compendex, Computer & Applied Sciences, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: n-AZO, n-Si isotype photodetector, UV, self-powered, on, off ratio, THIN-FILMS, BUFFER LAYER, DIODE
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, the electrical and photoresponse measurements of a transparent conductive Al-doped ZnO (AZO)/n-Si heterojunction device were conducted in visible light and UV wavelengths. AZO film was deposited by sputtering onto an n-Si wafer and investigated by means of morphological, chemical and electrical characterizations. The AZO/n-Si rectifying device exhibits an excellent reproducibility without noticeable variations after 90 days of measurements. At self-powered mode, the maximum on/off ratios were determined as 3081 for visible light and 4778 for UV light illumination of 365 nm. The responsivity and detectivity of the AZO/n-Si photodetector were 0.128 A W-1 and 1.05 x 10(11) Jones for 365 nm, whereas they were 0.055 A W-1 and 4.60 x 10(10) Jones for 395 nm, respectively (at -2.0 V). This study demonstrated that the n-AZO/n-Si isotype heterojunction photodetector was fabricated at low cost and it is a potential candidate in both the visible region and the UV region with a good performance, in contrast to the widely studied pn heterojunctions.