Structural, optical and electrical properties of CdS, Cd0.5In0.5S and In2S3 thin films grown by SILAR method

KUNDAKÇİ M., Ates A., Astam A., Yidirim M.

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, cilt.40, sa.3, ss.600-605, 2008 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 40 Sayı: 3
  • Basım Tarihi: 2008
  • Doi Numarası: 10.1016/j.physe.2007.08.145
  • Dergi Adı: PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.600-605
  • Anahtar Kelimeler: SILAR, CdS, In2S3, Cd0.5In0.5S, thin films, CHEMICAL BATH DEPOSITION, IONIC-LAYER ADSORPTION, PHOTOELECTRICAL PROPERTIES, SOLAR-CELL, US
  • Atatürk Üniversitesi Adresli: Evet

Özet

CdS, Cd0.5In0.5S and In2S3 thin films were grown by successive ionic layer adsorption and reaction (SILAR) method on a glass substrate at room temperature. These films were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Optical and electrical properties of these films have been investigated as a function of temperature. The absorption measurements were carried out in the temperature range 10-320 K with a step of 10 K. The band gap energies 'E-g' for CdS, Cd0.5In0.5S and In2S3 thin films have been found as 2.38, 2.52 and 2.63 eV at 10 K, respectively. The electrical resistivity of CdS, Cd0.5In0.5S and In2S3 thin films have been determined using a 'dc' two-probe method, in the temperature range of 300-450 K. The electrical resistivity values have been calculated at 300 K, as 2 x 10(6) Omega cm, 3.5 x 10(7) Omega cm and 1.5 x 10(7) Omega cm for CdS, Cd0.5In0.5S and In2S3, respectively. This is one of the first studies which led to deposition of the CdInS thin films by using the SILAR method. (C) 2007 Elsevier B.V. All rights reserved.