The current-voltage characteristics of the ferroelectric p-YMnO3 thin film/bulk p-Si heterojunction over a broad measurement temperature range
JOURNAL OF ALLOYS AND COMPOUNDS, cilt.782, ss.566-575, 2019 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 782
- Basım Tarihi: 2019
- Doi Numarası: 10.1016/j.jallcom.2018.12.246
- Dergi Adı: JOURNAL OF ALLOYS AND COMPOUNDS
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
- Sayfa Sayıları: ss.566-575
- Anahtar Kelimeler: Ferroelectric, YMnO3, Polycrystalline, Al/p-YMO/p-Si/Al, Heterojunction, Schottky barrier, Temperature dependent current characteristics, CURRENT-TRANSPORT MECHANISMS, SCHOTTKY-BARRIER DIODES, IMPEDANCE SPECTROSCOPY, DIELECTRIC-RELAXATION, ELECTRICAL-PROPERTIES, LEAKAGE CURRENT, YMNO3, FILMS, DEPENDENCE, PARAMETERS
- Atatürk Üniversitesi Adresli: Evet
Özet
The reverse and forward bias I-V characteristics of the Al/p-YMO/p-Si/Al heterojunction were measured at room temperature (RT) and over temperature range, from 50 to 320 K, and the I-V curves showed Schottky diode-like characteristics. The ideality factor and barrier height values were calculated as 0.81 and 2.62 from the forward bias I-V curve at room temperature (300 K), respectively. The YMO powder was prepared via solid state reaction technique. YMO thin films were grown on front surface of p-Si substrate by radio frequency (rf) magnetron sputtering using a polycrystalline YMO single target. The YMO thin film thickness on Si substrate was measured as similar to 70 nm via Dektak XT surface profilometer. The XRD, SEM, UV-Vis and XPS measurements of the YMO thin film were also performed. The bandgap energy of YMnO3 thin films was determined as 2.10 eV by UV-vis. The temperature-dependent reverse and forward bias I-V curves were evaluated in terms of thermionic emission (TE), Schottky emission, Fowler-Nordheim (F-N) tunneling and space charge-limited current (SCLC) current theories. Furthermore, it has been seen that the forward bias conduction in the junction at each temperature obeys F-N tunneling because of the linearity in the In (I/V-2) versus V-1 curves. (C) 2018 Elsevier B.V. All rights reserved.