Effects of Au-Ag and Au-Cu alloy ratios on the temperature dependent current-voltage characteristics of Au-Ag/n-GaAs/In and Au-Cu/n-GaAs/In Schottky diodes

Kup S., Taser A., Kanmaz I., Guzeldir B., Saglam M.

International Congress on Semiconductor Materials and Devices (ICSMD), Konya, Türkiye, 17 - 19 Ağustos 2017, cilt.18, ss.1936-1945, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 18
  • Basıldığı Şehir: Konya
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.1936-1945
  • Anahtar Kelimeler: Au-Ag and Au-Cu alloys, EDXRF, Schottky diodes, Temperature dependent, BARRIER HEIGHT, PARAMETERS, INHOMOGENEITIES
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this study, Au-Ag /n-GaAs/In and Au-Cu/n-GaAs/In Schottky diodes were fabricated with different ratios of Au-Ag and Au-Cu alloys. The coherent radiation of X-ray tube target line from the sample instead of characteristic Xray has been used for the quantitative analysis of Au-Ag and Au-Cu alloys ratio (25%-75%, 50%-50%, 75%-25%) in energy dispersive X-ray fluorescence (EDXRF) spectrometry. It has been found that the expected ratios of metal percent exist in the alloys, approximately. The forward bias current-voltage temperature (I-V-T) characteristics of the diodes were investigated in the temperature range of 100-320 K. The some main electrical parameters such as the barrier height, ideality factor, and series resistance were found as a function temperature within the thermionic emission (TE) theory and came across some anomalies. Attempts were made to examine the possible factors contributing to the observed anomalies based on the proposed theory. (C) 2019 Elsevier Ltd. All rights reserved.