Analysis on the temperature dependent electrical properties of Cr/Graphene oxide-Fe3O4 nanocomposites/n-Si heterojunction device

Gumus I., Metin O., SEVİM M., Aydogan Ş.

DIAMOND AND RELATED MATERIALS, cilt.108, 2020 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 108
  • Basım Tarihi: 2020
  • Doi Numarası: 10.1016/j.diamond.2020.107933
  • Dergi Adı: DIAMOND AND RELATED MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chimica, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Fe3O4 nanoparticles, Graphene-oxide, Heterojunction, Nanocomposite, Inhomogeneity, CURRENT-VOLTAGE CHARACTERISTICS, GRAPHENE OXIDE, SCHOTTKY DIODE, BARRIER HEIGHTS, PARAMETERS, EFFICIENT, CONTACTS, PERFORMANCE, EXTRACTION, TRANSPORT
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this study, the Cr/n-Si/Al and Cr/Graphene oxide-Fe3O4 nanocomposites (GO-Fe3O4)/n-Si/Al heterojunction devices were fabricated and their Schottky diode performances were studied comparatively. In the first step, the GO-Fe3O4 nanocomposites were synthesized and the film characterization was carried out via XRD, SEM and AFM analysis methods. The results showed that the performance of the Cr/GO-Fe3O4/n-Si/Al device was better than that of Cr/n-Si/Al. For example, experimental ideality factors and the barrier heights were determined as 3.75 and 0.70 eV for Cr/n-Si/Al while they were found as 1.28 ve 0.63 eV for Cr/GO-Fe3O4/n-Si/Al heterojunction device. Next, we examined the electronic properties of the Cr/GO-Fe3O4/n-Si/Al heterojunction device as a function of temperature and the device performance of Cr/GO-Fe3O4/n-Si/Al heterojunction was evaluated by the analysis of characteristics. To examine the electrical features of Cr/GO-Fe3O4/n-Si/Al heterojunction device, I-V measurements were studied between 100 K and 360 K in steps of 20 K. Next, the device parameters such as barrier height, ideality factor and series resistance were calculated by using Thermionic Emission (TE) and Cheung method. As a result of these measurements, it was found that the barrier height and ideality factor of the Cr/GO-Fe3O4/n-Si/Al heterojunction were depended on temperature, in which the barrier height increases while the ideality factor decreases with increasing temperature. According to calculations done by TE, the barrier height and ideality factor of Cr/GO-Fe3O4/n-Si/Al heterojunction device were found to be 0.26 eV and 2.46 eV at 100 K to 0.73 eV and 1.28 eV at 360 K. Additionally, the capacitance-voltage characteristics of the mentioned structure were analyzed at room temperature.