Improving the performance of the organic solar cell and the inorganic heterojunction devices using monodisperse Fe3O4 nanoparticles

Caldiran Z., Biber M., Metin O., AYDOĞAN Ş.

OPTIK, cilt.142, ss.134-143, 2017 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 142
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.ijleo.2017.05.071
  • Dergi Adı: OPTIK
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.134-143
  • Anahtar Kelimeler: ITO/PEDOT:PSS/P3HT:PCBM:Fe3O4 solar cell, Fe3O4 nanoparticles, Fe3O4/p-GaAs heterostructure, Inhomogeneity barrier, Ideality factor, C-V CHARACTERISTICS, BARRIER HEIGHT, P-TYPE, ELECTRICAL CHARACTERISTICS, VOLTAGE CHARACTERISTICS, SCHOTTKY DIODES, GAAS, EXTRACTION, TRANSPORT, SEMICONDUCTOR
  • Atatürk Üniversitesi Adresli: Evet

Özet

8 nm Fe3O4 nanoparticles (NPs) were successfully doped into poly(3hexylthiophene):phenyl-C-61-butyric acid methyl ester (P3HT:PCBM) to fabricate ITO/PEDOT:PSS/P3HT:PCBM:Fe3O4/AI solar cell along with a heterojunction device of Fe3O4/p-GaAs by depositing them on p-GaAs substrates. The experimental results revealed that the presence of Fe3O4 nanoparticles (NPs) in the ITO/PEDOT:PSS/P3HT:PCBM/A1 solar cell improved its performance with respect to the one without Fe3O4. For example, power conversion efficiency was increased from 1.09% to 2.22% when doping 5 wt% of Fe3O4 NPs to P3HT:PCBM. This was attributed to increase of the light absorption in the presence of Fe3O4 NPs doping. Furthermore, the analysis of the current-voltage (I-V), capacitance-voltage (C-V) and capacitance-frequency (C-f) characteristics of the Fe3O4/p-GaAs heterojunction have been studied successfully. The experimental barrier height Ob and ideality factor n were determined as 0.80 eV and 1.53, respectively, from the experimental I-V plots. In addition, the value of the Phi(b) obtained from the C-V characteristics was 0.95 eV (f= 500 kHz). The mismatch between barrier heights obtained from both measurements was explained by the two techniques are based on different nature. The interface state density of the Fe3O4/p-GaAs heterojunction was determined from 5.16 x 10(14) cm(-2)eV(-1) to 1.34 x 10(15) cm(-2)eV(-1). (C) 2017 Elsevier GmbH. All rights reserved.