Conductance and capacitance-frequency characteristics of polypyrrole/p-type silicon structures

ÇAKAR M., BİBER M., SAĞLAM M., Türüt A.

JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS, cilt.41, sa.12, ss.1334-1338, 2003 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 41 Sayı: 12
  • Basım Tarihi: 2003
  • Doi Numarası: 10.1002/polb.10465
  • Dergi Adı: JOURNAL OF POLYMER SCIENCE PART B-POLYMER PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1334-1338
  • Anahtar Kelimeler: barrier, diodes, conjugated polymers, polypyrroles, ELECTRICAL-PROPERTIES, ELECTRONIC-PROPERTIES, SCHOTTKY, DIODES, ALUMINUM
  • Atatürk Üniversitesi Adresli: Evet

Özet

We formed a polypyrrole/p-type silicon device by an anodization process. An aluminum electrode was used as an ohmic contact. From the current-voltage characteristics of the device, barrier height and ideality factor values of 0.662 eV and 1.734, respectively, were obtained from a forward-bias current-voltage plot. Low capacitance-frequency and conductance-frequency measurements from 0.00 to 0.30 V with steps of 0.02 V were made. At each frequency, the measured capacitance decreased with increasing frequency because of a continuous distribution of the interface states in the frequency range of 5.0 Hz to 2.0 MHz. (C) 2003 Wiley Periodicals, Inc.