Akademik Veri Yönetim Sistemi
Journal of Anatolian Physics and Astronomy, cilt.3, sa.2, ss.62-74, 2024 (Hakemli Dergi)
This study focuses on the synthesis of iron oxide-graphene (-Fe2O3-G) composite materials and the evaluation of their performance in devices constructed on n-type silicon (n-Si) semiconductors, under both dark and illuminated conditions. Key electrical parameters such as the ideality factor (n = 2.59), barrier height (Φb = 0.74 eV), and series resistance (Rs = 70 kΩ) were determined using Thermionic Emission (TE) and Norde methods from I-V measurements taken in the dark. The device's photoelectrical properties were further examined under illumination, revealing that the Fe2O3-G/n-Si device exhibits self-powered behavior, operating without an external power source. The device achieved a maximum ON/OFF ratio of 32496 and a spesific detectivity (D*) of 26.6 Jones at 0V, along with a maximum responsivity (R) of 98 mAW-1 at -2V. These results highlight the device's potential for efficient photodetection, particularly in self-powered applications.