A comparative investigation of 980 nm GaAs and 1550 nm InP-based diode lasers

Arslan K. O., AKSAKAL R., ÇAKMAK B.

LASER PHYSICS, cilt.31, sa.11, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 31 Sayı: 11
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1088/1555-6611/ac3013
  • Dergi Adı: LASER PHYSICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Compendex, INSPEC
  • Anahtar Kelimeler: rate equations, semiconductor laser, transient and steady characteristics, InGaAs, GaAs and AlGaInAs, InP lasers
  • Atatürk Üniversitesi Adresli: Evet

Özet

Transient and steady-state characteristics of 1550 nm AlGaInAs/InP and 980 nm InGaAs/GaAs diode lasers were comparatively modeled using rate equations. The variations of the number of electrons (N-t) and the output power (P (out)-t) with time were examined in the transient regime for the both lasers. In addition steady-state characteristics, the number of electrons (N-I) and the output power versus current (L-I), was also investigated for different values of cavity length, stripe-width and active layer thickness. We also verified for both of the lasers that L-I simulation results are well agreed with the experimental results.