Pulse-controlled growth and interface-regulated transport in PED-grown TiO2 thin-film transistors with LaAlO3 gate dielectric
Journal of Materials Science: Materials in Electronics, cilt.37, sa.27, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 37 Sayı: 27
- Basım Tarihi: 2026
- Doi Numarası: 10.1007/s10854-026-18499-9
- Dergi Adı: Journal of Materials Science: Materials in Electronics
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Aerospace Database, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, MEDLINE, Engineering Source (EBSCO), Materials Science & Engineering Collection (ProQuest), Technology Collection (ProQuest)
- Atatürk Üniversitesi Adresli: Evet
Özet
TiO2-based thin-film transistors (TFTs) are promising candidates for wide-bandgap oxide electronics; however, their performance is often limited by interfacial trap states and structural disorder in the channel layer. In this study, pulse-controlled pulsed electron deposition (PED) is employed to systematically regulate the microstructural evolution and transport behavior of TiO2 thin films integrated with a PED-grown LaAlO3 high-k gate dielectric. The influence of pulse number (5000–11000) and post-deposition thermal annealing on crystallinity, morphology, and electrical characteristics of TiO2 TFT devices is investigated in detail. Increasing the number of pulses produces concurrent changes in channel thickness and film microstructure, accompanied by improved carrier transport. Thermal annealing further improves the electrical characteristics, consistent with reduced trap-assisted transport and enhanced electrostatic gate control, yielding a field-effect mobility of 0.59 cm2 V⁻1 s⁻1, a subthreshold swing of 2.37 V dec⁻1, and an on/off current ratio exceeding 108. The observed transport evolution is therefore interpreted in terms of the coupled influence of channel thickness evolution and microstructural modification, while the annealing-induced electrical improvement is discussed in terms of experimentally observed changes without assigning it to a directly verified interfacial mechanism. These results demonstrate that pulse-controlled PED growth provides a controllable pathway for interface-limited transport engineering in wide-bandgap oxide semiconductor TFT architectures.