Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plot

GÜLNAHAR M., EFEOĞLU H.

SOLID-STATE ELECTRONICS, cilt.53, sa.9, ss.972-978, 2009 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 53 Sayı: 9
  • Basım Tarihi: 2009
  • Doi Numarası: 10.1016/j.sse.2009.03.027
  • Dergi Adı: SOLID-STATE ELECTRONICS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.972-978
  • Anahtar Kelimeler: Schottky barrier inhomogenities, Schottky diodes, GaTe, Layered crystal, I-V-T, TEMPERATURE-DEPENDENCE, ELECTRON-TRANSPORT, HEIGHT INHOMOGENEITIES, DIODES, PHOTOLUMINESCENCE, VOLTAGE
  • Atatürk Üniversitesi Adresli: Evet

Özet

The current-voltage (I-V) characteristics of Au/p-GaTe Schottky contact were characterized at 60-300 K temperature range and compared with those of Al/p-GaTe. The observed anomalies of Schottky barrier were interpreted on the basis of thermionic emission model. The barrier height and ideality factor values at 280 K for Au were 0.513 eV and 1.022, respectively. As temperature lowered down to 140 K, we observed that these parameters gradually decreased. The barrier height dependence on temperature demonstrated a double-Gaussian distribution. The weighting coefficients for each Gaussian distribution and their standard deviations were found to be 0.76-37.7 meV and 0.24-58.2 meV for Au, respectively. A linearization procedure based on the double barrier distribution was carried out, and the Richardson constant for Au/p-GaTe was found to be 148.03 A K(-2) cm(-2). This value is reasonably close to the theoretical value given in the literature as 119.4 A K(-2) cm(-2). (C) 2009 Elsevier Ltd. All rights reserved.