Electrothermal investigation of the switching phenomena in p-type TlInSe2 single crystals
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, cilt.153, sa.1, ss.145-151, 1996 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 153 Sayı: 1
- Basım Tarihi: 1996
- Doi Numarası: 10.1002/pssa.2211530113
- Dergi Adı: PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Compendex, INSPEC
- Sayfa Sayıları: ss.145-151
- Atatürk Üniversitesi Adresli: Evet
Özet
Large TlInSe2 single crystals are grown by the Bridgman-Stockbarger method, starting from stoichiometric melts. Current-voltage (I-V) characteristics of symmetric In/p-TlInSe2/In structures exhibit two distinct regions: an ohmic region at low current densities and a non-linear region (S-shaped) having negative differential resistance (NDR) at moderate and higher current densities. An electrothermal model is used for the explanation of this non-linear behaviour. The non-linear behaviour of the I-V curves is studied at different ambient temperatures in the 100 to 340 K region. The sample temperature and the threshold voltage of the NDR region are examined as a function of current density and ambient temperature, respectively. The electrothermal model is quite satisfactory for the explanation of this process.