Effect of voltages on gamma-Ray linear attenuation coefficients for some semiconductors

Akça B., GÜRBULAK B., Zeki Erzeneoğlu S. Z.

RADIATION PHYSICS AND CHEMISTRY, cilt.179, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 179
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.radphyschem.2020.109208
  • Dergi Adı: RADIATION PHYSICS AND CHEMISTRY
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Chemical Abstracts Core, Chimica, Communication Abstracts, Compendex, EMBASE, INSPEC, Metadex, Pollution Abstracts, Civil Engineering Abstracts
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, the change according to the different voltages (0, 5, 10, 15, 20 and, 25 V) of gamma-ray linear attenuation coefficients for GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTe0.8Se0.2 semiconductors have been measured by using an extremely narrow collimated-beam transmission method in the energy 59.54 keV. Gamma-rays of Am-241 were detected by using a high-resolution Si(Li) detector and, energy dispersive X-ray fluorescence spectrometer (EDXRFS). GaSe, GaSe:Cd, GaSe:Sn, GaTe, GaTe:Cd, Ga0.9In0.1Se, GaTe0.4Se0.6, and GaTeo(0.8)Se(0.2) semiconductors were grown by the Bridgman-Stockbarger method. There are no cracks or voids on the surface of ingots. Samples were cleaved along the cleavage planes (001). The freshly cleaved crystals have mirror-like surfaces even before using mechanical treatment. Results are presented and discussed in this study.