Kasapoğlu A. E.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, cilt.59, sa.32, ss.1-18, 2026 (SCI-Expanded, Scopus)
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Yayın Türü:
Makale / Tam Makale
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Cilt numarası:
59
Sayı:
32
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Basım Tarihi:
2026
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Doi Numarası:
10.1088/1361-6463/ae91f3
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Dergi Adı:
JOURNAL OF PHYSICS D-APPLIED PHYSICS
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Derginin Tarandığı İndeksler:
Science Citation Index Expanded (SCI-EXPANDED), Scopus, Applied Science & Technology Source, Chemical Abstracts Core, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO)
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Sayfa Sayıları:
ss.1-18
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Anahtar Kelimeler:
self-driven, high performance, <italic>I</italic>-<italic>V</italic> characteristic, photosensitive, Norde method
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Atatürk Üniversitesi Adresli:
Evet
Özet
Abstract
In this study, mixed-valence Sn
2+
/Sn
4+
tin selenide (SnSe/SnSe
2
) nanoflakes (NFs) were successfully synthesized via a solvothermal method and employed as an interfacial layer in an Au/SnSe/n–Si/Al heterojunction device. Structural and compositional analyses confirmed the coexistence of SnSe and SnSe
2
phases, while optical measurements revealed strong absorption across the visible–near-infrared region, with direct and indirect band gaps estimated to be 1.62 and 0.98 eV, respectively. The fabricated SnSe/n-Si device exhibited improved electrical characteristics compared to the reference Au/n–Si/Al device, with an ideality factor ranging from 1.53 to 1.62 and a barrier height of 0.80–0.82 eV. The reverse saturation current was reduced to the order of ∼10
−9
A, indicating suppressed leakage current. Additionally, the rectification ratio increased by approximately two orders of magnitude (∼10
6
), demonstrating enhanced junction quality. Under illumination, the device showed a pronounced photoresponse, particularly in the reverse-bias region, while maintaining stable forward-bias characteristics. A maximum ON/OFF ratio of 6620 (1 Sun) and 1724 (UV, 395 nm) was achieved at −0.5 V. The responsivity reached 0.063 AW
−1
under UV illumination, while the specific detectivity was on the order of ∼10
10
Jones. Furthermore, the device exhibited an external quantum efficiency of ∼19% with stable performance across varying bias conditions. These results demonstrate that the incorporation of solvothermally synthesized mixed-valence SnSe/SnSe
2
NFs significantly enhances interfacial charge transport and photodetection performance, highlighting their potential for low-power and self-powered optoelectronic applications.