The Advent of Indium Selenide: Synthesis, Electronic Properties, Ambient Stability and Applications

Boukhvalov D. W., GÜRBULAK B., Duman S., WANG L., POLİTANO A., Caputi L. S., ...Daha Fazla

NANOMATERIALS, cilt.7, sa.11, 2017 (SCI-Expanded) identifier identifier identifier

  • Yayın Türü: Makale / Derleme
  • Cilt numarası: 7 Sayı: 11
  • Basım Tarihi: 2017
  • Doi Numarası: 10.3390/nano7110372
  • Dergi Adı: NANOMATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: indium selenide, exfoliation, Bridgman-Stockbarger growth, chemical reactivity, angle-resolved photoemission spectroscopy, nanodevices, INSE SINGLE-CRYSTALS, N-TYPE INSE, OPTICAL-PROPERTIES, LAYERED INSE, 2-DIMENSIONAL MATERIALS, PHOTOCURRENT GENERATION, HIGH-PERFORMANCE, IMPURITY LEVELS, SOLAR-CELLS, GRAPHENE
  • Atatürk Üniversitesi Adresli: Evet

Özet

Among the various two-dimensional semiconductors, indium selenide has recently triggered the interest of scientific community, due to its band gap matching the visible region of the electromagnetic spectrum, with subsequent potential applications in optoelectronics and especially in photodetection. In this feature article, we discuss the main issues in the synthesis, the ambient stability and the application capabilities of this novel class of two-dimensional semiconductors, by evidencing open challenges and pitfalls. In particular, we evidence how the growth of single crystals with reduced amount of Se vacancies is crucial in the road map for the exploitation of indium selenide in technology through ambient-stable nanodevices with outstanding values of both mobility of charge carriers and ON/OFF ratio. The surface chemical reactivity of the InSe surface, as well as applications in the fields of broadband photodetection, flexible electronics and solar energy conversion are also discussed.