Influence of Te and Se doping on ZnO films growth by SILAR method

GÜNEY H., DUMAN Ç.

International Conference on Advances in Natural and Applied Sciences, Antalya, Turkey, Türkiye, 20 - 23 Nisan 2016, ss.201221 identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Doi Numarası: 10.1063/1.4945948
  • Basıldığı Şehir: Antalya, Turkey
  • Basıldığı Ülke: Türkiye
  • Sayfa Sayıları: ss.201221
  • Atatürk Üniversitesi Adresli: Hayır

Özet

The AIP Successive ionic layer adsorption and reaction (SILAR) is an economic and simple method to growth thin films. In this study, SILAR method is used to growth Selenium (Se) and Tellurium (Te) doped zinc oxide (ZnO) thin films with different doping rates. For characterization of the films X-ray diffraction (XRD), absorbance and scanning electron microscopy (SEM) are used. XRD results are showed well-defined strongly (002) oriented crystal structure for all samples. Also, absorbance measurements show, Te and Se concentration are proportional and inversely proportional with band gap energy, respectively. SEM measurements show that the surface morphology and thickness of the material varied with Se and/or Te and varying concentrations.