Metal/p-InSe: Mn Schottky barrier diodes

Duman S., Elkoca Z., Gurbulak B., Tekle T. B., Dogan S.

Journal of Optoelectronics and Advanced Materials, cilt.14, ss.693-698, 2012 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 14
  • Basım Tarihi: 2012
  • Dergi Adı: Journal of Optoelectronics and Advanced Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.693-698
  • Anahtar Kelimeler: Layered semiconductors, InSe, Schottky diode, Barrier height, BEHAVIOR
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this study, we have reported a study of a number of metal/p-type InSe:Mn (Al, Au, Au-Be, Au-Ge, Au-Zn, Cd, Co, Mn, Sb, Sn and Zn) Schottky barrier diodes (SBDs). The barrier height (BH) and ideality factor (n) values for the metal/p-InSe:Mn SBDs have been obtained from their I V characteristics at the room temperature. At high currents in the forward direction, the series resistance effect has been observed. The value of series resistance has been determined from I V measurements using Cheung's functions.