Co/aniline blue/silicon sandwich hybrid heterojunction for photodiode and low-temperature applications

Kacus H., Şahin Y., Aydoğan Ş., İncekara Ü., Yılmaz M.

JOURNAL OF SANDWICH STRUCTURES & MATERIALS, cilt.23, sa.6, ss.2547-2565, 2021 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 23 Sayı: 6
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1177/1099636220909946
  • Dergi Adı: JOURNAL OF SANDWICH STRUCTURES & MATERIALS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, Aerospace Database, Communication Abstracts, Compendex, INSPEC, Metadex, Civil Engineering Abstracts
  • Sayfa Sayıları: ss.2547-2565
  • Anahtar Kelimeler: Aniline blue, low temperature, barrier inhomogeneity, photoresponse, sandwich structure, CURRENT-VOLTAGE CHARACTERISTICS, I-V-T, SERIES RESISTANCE, TRANSPORT, CONTACTS
  • Atatürk Üniversitesi Adresli: Evet

Özet

The temperature dependence of the current-voltage and room temperature capacitance-voltage measurements of Co/aniline blue/n-Si sandwich-type rectifying device was investigated.Furthermore, the effects of the illumination on the current-voltage measurements were tested with 100 & x202f;mW/cm(2) light intensity, and it was seen that Co/aniline blue/n-Si sandwich-type device showed a clear response to illumination, and it may be a candidate for solar cells or photodiode applications. The rectifying device parameters, such as the barrier height (CYRILLIC CAPITAL LETTER EF), the ideality factor (n), the rectification ratio, and the series resistance (R-s), were obtained as a function of temperature using thermionic emission, Cheung function, and Norde function. The interface state densities versus energy were obtained. The Richardson constant (A*) obtained from the In(I-o/T-2) versus 1000/T plot was much less than the theoretical value for n-Si. The mean Schottky barrier height and the standard deviation (sigma(o)) were calculated using the apparent Schottky barrier height CYRILLIC CAPITAL LETTER EFap versus 1/2 kT plot. So, it has been found to be 1.08 eV and 0.15 V (260-460 K) and 0.79 eV and 0.10 V (100-260 K), respectively. The results were discussed based on the presence of two Gaussian distributions of CYRILLIC CAPITAL LETTER EFb potential in the contact area of Co/aniline blue/n-Si/Al device.