Improving the rectifying properties of metal/semiconductor junction using novel material: Zam-zam

AYDOĞAN Ş., YILMAZ M., CALDIRAN Z.

SENSORS AND ACTUATORS A-PHYSICAL, cilt.248, ss.22-28, 2016 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 248
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.sna.2016.07.019
  • Dergi Adı: SENSORS AND ACTUATORS A-PHYSICAL
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.22-28
  • Anahtar Kelimeler: Zam zam, Electronic devices, Electronic materials, Interfacial, Irradiation effects, ELECTRON-TRANSPORT, SCHOTTKY CONTACTS, SOLAR-CELLS, WATER, SI
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this work, a 1.42 mu m thin layer using zam-zam water has been formed as a thin interlayer to modify the Schottky barrier height (SBH) between Au contacts and Si substrates. Better rectifying ratio (2.14 x 10(5) at +/- 1 V bias) has been obtained according to Au/p-Si Schottky diode. The variations in the electrical characteristics of Au/zam-zam (ZZ) layer/p-Si Schottky diode have been investigated as a function of temperature, x-ray irradiation and illumination by using current-voltage (I-V) measurements. It has been found that the I-V characteristics of the Au/ZZ layer/p-Si Schottky diode strongly depend on temperature, x-ray irradiation and illumination. The temperature dependent of the junction parameters such as ideality factor and the barrier height has been explained by barrier inhomogeneities by assuming a Gaussian distribution of barrier heights at the interface of the junction materials. Furthermore, the I-V characteristic of the Au/ZZ layer/p-Si Schottky diode has showed a good illumination response like a solar cell. (C) 2016 Elsevier B.V. All rights reserved.