Dielectric Properties of Al Poly methyl methacrylate PMMA p Si Structures at Temperatures Below 300 K

ARAS G., ORHAN E., AKİL BİRKAN S., BİLGE OCAK S., ERTUĞRUL M.

Procedia - Social and Behavioral Sciences, cilt.195, ss.1740-1745, 2015 (SSCI) identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 195
  • Basım Tarihi: 2015
  • Doi Numarası: 10.1016/j.sbspro.2015.06.295
  • Dergi Adı: Procedia - Social and Behavioral Sciences
  • Derginin Tarandığı İndeksler: Social Sciences Citation Index (SSCI), ERIC (Education Resources Information Center), MLA - Modern Language Association Database
  • Sayfa Sayıları: ss.1740-1745
  • Anahtar Kelimeler: Dielectric properties, electric modulus, Organic compounds, CONDUCTIVITY, TRANSISTORS, COMPOSITE, FILMS
  • Atatürk Üniversitesi Adresli: Evet

Özet

Al/Poly (methyl methacrylate) (PMMA)/p-Si organic Schottky devices were fabricated on a p-Si semiconductor wafer by spin coating of PMMA solution. Dielectric properties of the Al/Poly (methyl methacrylate) (PMMA)/p-Si structure have been studied using temperature-dependent admittance-voltage (C/G-V) measurements at temperatures below 300 K temperature at 1MHz. The temperature-dependent real and imaginary parts of the dielectric constant (epsilon', epsilon '') and of the electric modulus (M', M '') as well as the ac electrical conductivity (sigma(AC),) of structure were obtained using C and G data. Experimental results show that the epsilon', epsilon '', sigma(AC), loss tangent (tan delta), M' and M '' values were strong functions of the temperature and the applied bias voltage. (C) 2015 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY-NC-ND license.