Effects of aging on the electrical properties of Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes

Taşer A., Orhan Z., Aykaç C., Özakın O., Güzeldir B., Sağlam M.

Materials Today: Proceedings, cilt.46, ss.6954-6959, 2021 (Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 46
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.matpr.2021.03.270
  • Dergi Adı: Materials Today: Proceedings
  • Derginin Tarandığı İndeksler: Scopus, INSPEC
  • Sayfa Sayıları: ss.6954-6959
  • Anahtar Kelimeler: Au-Cu alloys, Schottky diodes, Effects of Aging, Cheung and Norde method
  • Atatürk Üniversitesi Adresli: Evet

Özet

In this study, it is aimed to produce Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes and to calculate the diode parameters such as ideality factor, barrier height and series resistance by using timedependent current-voltage (I-V) measurements. First, pure Ti metal was evaporated on the matt surface of the n-Si semiconductors and annealed at 420 degrees C in nitrogen atmosphere. Secondly, Au and Cu metals and AuCu alloy were evaporated on the other surface of n-Si semiconductors. So, Au/n-Si/Ti, Cu/n-Si/Ti and AuCu/n-Si/Ti Schottky diodes were obtained. Finally, I-V measurements of the Schottky diodes were taken at specified time intervals (immediately,1, 7, 15, 30, 90, 180 and 365 days) and time-dependent diode parameters were calculated using the Thermionic Emission, Cheung and Norde methods. (c) 2021 Elsevier Ltd. Selection and peer-review under responsibility of the scientific committee of the International Congress on Semiconductor Materials and Devices, ICSMD2018.