Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

Gullu, O.; Aydoğan, Şakir; Şerifoğlu, Korkmaz; Turut, Abdulmecit

doi:10.1016/j.nima.2008.05.043

Electron irradiation effects on the organic-on-inorganic silicon Schottky structure

Gullu O., Aydoğan Ş., Şerifoğlu K., Turut A.

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, cilt.593, ss.544-549, 2008 (SCI-Expanded)

Yayın Türü: Makale / Tam Makale
Cilt numarası: 593
Basım Tarihi: 2008
Doi Numarası: 10.1016/j.nima.2008.05.043
Dergi Adı: NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
Sayfa Sayıları: ss.544-549
Atatürk Üniversitesi Adresli: Evet

Özet

In this study. the effects of high-energy electron irradiation on the electrical characteristics of a Rhodamine-101(Rh101)/p-Si Schottky structure were investigated. Some contact parameters such as barrier height, ideality factor and series resistance were calculated from the current-voltage (I-V) characteristics. It was seen that these three parameters were increased by the electron irradiation. After the electron irradiation, it was also seen that the carrier concentration, the reverse bias current and the capacitance of the device decreased. (C) 2008 Elsevier B.V. All rights reserved.