Enhanced electrical transport in CVD-grown monolayer MoS₂ thin-film transistors via carbon hybridization
Diamond and Related Materials, cilt.169, 2026 (SCI-Expanded, Scopus)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 169
- Basım Tarihi: 2026
- Doi Numarası: 10.1016/j.diamond.2026.114055
- Dergi Adı: Diamond and Related Materials
- Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC, Academic Search Ultimate (EBSCO), Engineering Source (EBSCO)
- Anahtar Kelimeler: Carbon hybridization, Electrical transport, Graphene nanoplatelets, Monolayer MoS₂, Reduced graphene oxide, Thin-film transistors
- Atatürk Üniversitesi Adresli: Evet
Özet
Monolayer molybdenum disulfide (MoS₂) thin-film transistors (TFTs) have attracted considerable attention for next-generation electronic applications owing to their excellent electrostatic controllability and compatibility with large-area device fabrication. However, the electrical performance of chemical vapor deposition (CVD) grown MoS₂ transistors is often limited by channel resistance and surface-related transport losses. In this study, the influence of conductive carbon hybridization on the electrical transport characteristics of monolayer MoS₂ TFTs was systematically investigated using graphene nanoplatelets (GNPs) and reduced graphene oxide (rGO) as surface modifiers. Structural characterization by scanning electron microscopy (SEM), cross-sectional SEM, Raman mapping, Raman spectroscopy, and X-ray photoelectron spectroscopy (XPS) confirmed successful carbon incorporation while preserving the structural and chemical integrity of the monolayer MoS₂ channel. Raman mapping revealed homogeneous surface modification throughout the investigated channel region, indicating reproducible formation of the hybrid layer. Electrical measurements demonstrated a clear enhancement in transistor performance following carbon hybridization. The field-effect mobility increased from 11.45 cm2 V−1 s−1 for pristine MoS₂ to 25.45 cm2 V−1 s−1 for GNPs/MoS₂ and 14.03 cm2 V−1 s−1 for rGO/MoS₂ devices. Similarly, the current on/off ratio increased from 5.07 × 106 to 3.41 × 107 and 3.27 × 107 for GNPs/MoS₂ and rGO/MoS₂ structures, respectively. Channel-length-dependent resistance analysis further revealed a systematic reduction in device resistance after carbon modification, while the threshold voltage and subthreshold swing remained relatively unchanged. Statistical analysis of independently fabricated devices confirmed the reproducibility of the observed electrical enhancement. Among the investigated carbon modifiers, graphene nanoplatelets provided the largest improvement in electrical transport performance. The results demonstrate that conductive carbon hybridization offers a simple and scalable strategy to improve charge transport in monolayer MoS₂ thin-film transistors and highlight a strong correlation between surface modification and electrical performance in two-dimensional semiconductor devices.