The synthesis of SrTiO3 nanocubes and the analysis of nearly ideal diode application of Ni/SrTiO3 nanocubes/n-Si heterojunctions

Tasyurek L. B., SEVİM M., Caldiran Z., AYDOĞAN Ş., METİN Ö.

MATERIALS RESEARCH EXPRESS, cilt.5, sa.1, 2018 (SCI-Expanded) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 5 Sayı: 1
  • Basım Tarihi: 2018
  • Doi Numarası: 10.1088/2053-1591/aaa745
  • Dergi Adı: MATERIALS RESEARCH EXPRESS
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Anahtar Kelimeler: perovskite-type oxides, SrTiO3, nanocubes, heterojunction device, INDUCED GAP STATES, STRONTIUM-TITANATE, TEMPERATURE-DEPENDENCE, RAMAN-SCATTERING, BARRIER HEIGHTS, SCHOTTKY, FABRICATION, TECHNOLOGY, RESISTANCE, SPECTRUM
  • Atatürk Üniversitesi Adresli: Evet

Özet

A perovskite type of strontium titanate (SrTiO3) nanocubes (NCs) were synthesized by using a hydrothermal process and the thin films of these NCs were deposited on an n-type silicon wafer by spin coating technique. As-synthesized SrTiO3 NCs were characterized by transmission electron microscope, scanning electron microscope, energy dispersive x-ray, x-ray diffraction and Raman spectroscopy. After evaporation of 12 Ni dots on the SrTiO3 NCs thin films deposited on n-Si, the Ni/SrTiO3 NCs/n-Si heterojunction devices were fabricated for the first time. The ideality factors of the twelve fabricated devices were vary from 1.05 to 1.22 and the barrier height values varied from 0.64 to 0.68 eV. Furthermore, since all devices yielded similar characteristics, only the current-voltage and the capacitance-voltage of one selected device (named H1) were investigated in detailed. The series resistance of this device was calculated as 96 Omega.