Akademik Veri Yönetim Sistemi
Optics and Laser Technology, cilt.199, 2026 (SCI-Expanded, Scopus)
Porous silicon (PS) has emerged as a promising material for optoelectronic applications owing to its distinctive nanostructured morphology and tunable photoluminescence (PL) properties. Its band gap can be adjusted based on fabrication parameters, which significantly enhances its potential for photonic applications. In particular, conventional silicon, which is typically unsuitable for ultraviolet (UV) detection because of its narrow band gap, can be modified through porosification to widen the band gap, thus making it more compatible with UV-sensitive materials. In this study, the effect of rapid thermal annealing (RTA) on the band gap of PS was investigated under two different ambient conditions: oxygen (O2) and nitrogen (N2). The photoluminescence and absorption characteristics in the UV wavelength region were systematically evaluated. PS layers were prepared by electrochemical etching at 10 mA/cm2 for 5–10 min, followed by annealing at 400 °C, 600 °C, and 800 °C for 0.5–1 min in O2 and N2 atmospheres. N2 annealed samples showed a band gap of 1.76–2.19 eV, while O2 annealed samples showed 1.87–2.63 eV. Annealing in O2 caused considerable surface oxidation, resulting in PL blue-shift and increased band gap due to quantum confinement and SiO2 formation. Conversely, N2 annealing increased the PL intensity without significant oxidation, resulting in a smaller band gap increase. Furthermore, PS Schottky diodes were fabricated and investigated using unannealed PS and PS structures annealed with different parameters. It was found that the RTA atmosphere and temperature play a decisive role in the electrical behavior (I-V characteristics) of PS Schottky diodes. An ideality Factor of 3.62 and a photoresponse of 0.5 × 103 A/W were obtained for the PS sample annealed in an N2 atmosphere at 400 °C.