Akademik Veri Yönetim Sistemi
SUPERLATTICES AND MICROSTRUCTURES, cilt.69, ss.175-186, 2014 (SCI-Expanded)
Tin oxide thin films doped with different Mo content were successfully grown by spray pyrolysis and they were characterized as a function of Mo content, changed from 0 to 3.5 at.% with 0.5 at.% step. The XRD studies showed that the films had SnO2 cassiterite structure with (2 1 1) preferential orientation and the best crystal properties was observed for 2 at.% Mo doped sample. The SEM images indicated the films were made up of nanosized grains and it was observed pyramidal, polyhedron shaped grains on the deposited films' surfaces. From electrical and optical studies, although 2 at.% Mo doped SnO2 film exhibited the lowest sheet resistance (39.81 Omega) and the highest IR reflective (81.77%), 1 at.% Mo doped film has the highest optical band gap (4.011 eV). The lowest Urbach energy (293 meV) and the highest figure of merit (1.80 x 10(-3) Omega(-1)) values were observed for 0.5 at.% Mo doped sample between all films. The results found in present study showed that Mo doped SnO2 thin films is a good candidate for solar cells, IR coating and other optoelectronic and technological applications. (C) 2014 Elsevier Ltd. All rights reserved.