Current-voltage and capacitance-voltage characteristics of metallic polymer/p-type Si Schottky contacts

Cakar M., Sadlam M., Onganer Y., Horvath Z., Turut A.

3rd International EuroConference on Advanced Semiconductor Devices and Microsystems, SMOLENICE CASTLE, Slovakya, 16 - 18 Ekim 2000, ss.255-256, (Tam Metin Bildiri) identifier identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası:
  • Doi Numarası: 10.1109/asdam.2000.889494
  • Basıldığı Şehir: SMOLENICE CASTLE
  • Basıldığı Ülke: Slovakya
  • Sayfa Sayıları: ss.255-256
  • Atatürk Üniversitesi Adresli: Evet

Özet

Metallic polypyrrole polymer/p-Si diodes were studied by current-voltage and capacitance-voltage measurements at room temperature. The diodes exhibited rectifying behaviour with an ideality factor of about 2 and potential barrier height of about 0.54 eV.